收藏本站
PolarHT TM
Power MOSFET
IXTA 36N30P
IXTP 36N30P
IXTQ 36N30P
V DSS
I D25
R DS(on)
=
=
≤
300 V
36 A
110 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
I D25
I DM
I AR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
300
300
± 30
± 40
36
90
36
V
V
V
V
A
A
A
G
TO-220 (IXTP)
S
D(TAB)
E AR
E AS
T C = 25 ° C
T C = 25 ° C
30
1.0
mJ
J
G
D S
D(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
10
V/ns
TO-3P (IXTQ)
T J ≤ 150 ° C, R G = 10 ?
P D
T C = 25 ° C
300
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G
D
S
D(TAB)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
International standard packages
Weight
TO-3P
TO-220
TO-263
5.5
4
3
g
g
g
Features
l
l
Unclamped Inductive Switching (UIS)
rated
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
Low package inductance
- easy to drive and to protect
BV DSS
V GS = 0 V, I D = 250 μ A
300
V
Advantages
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.5
± 100
1
200
V
nA
μ A
μ A
l
l
l
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
92
110
m ?
? 2005 IXYS All rights reserved
DS99155E(10/05)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTA3N100D2 MOSFET N-CH 1000V 3A D2PAK
IXTA3N120 MOSFET N-CH 1.2KV 3A TO-263
IXTA3N50D2 MOSFET N-CH 500V 3A D2PAK
IXTA3N60P MOSFET N-CH 600V 3A D2-PAK
IXTA48N20T MOSFET N-CH 200V 48A TO-263
IXTA50N25T MOSFET N-CH 250V 50A TO-263
IXTA5N60P MOSFET N-CH 600V 5A D2-PAK
IXTA60N10T MOSFET N-CH 100V 60A TO-263
相关代理商/技术参数
IXTA36N30T 功能描述:MOSFET 36 Amps 300V 110 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA36P15P 功能描述:MOSFET -36.0 Amps -150V 0.110 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA38N15T 功能描述:MOSFET 38 Amps 150V 52 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA3N100D2 功能描述:MOSFET N-CH MOSFETS (D2) 1000V 3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA3N100P 功能描述:MOSFET 3 Amps 1000V 4.8 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA3N110 功能描述:MOSFET 3 Amps 1100V 4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA3N110TRL 制造商:IXYS Corporation 功能描述:IXTA Series Single N-Channel 1200 V 4 Ohm 150 W Power Mosfet - TO-263
IXTA3N120 功能描述:MOSFET 3 Amps 1200V 4.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube